Indium selenide (In2Se3) is a binary compound composed of indium and selenium, characterized by its semiconductor properties and layered crystal structure. It typically crystallizes in a rhombohedral or hexagonal form, which contributes to its anisotropic electrical and optical properties. Indium selenide exhibits a direct bandgap, making it suitable for applications in optoelectronics, such as photodetectors and solar cells. The material is known for its high absorption coefficient in the visible to near-infrared spectrum, enhancing its utility in photonic devices. Additionally, In2Se3 is thermally stable and can be synthesized through various methods, including chemical vapor deposition and solid-state reactions. Its electrical conductivity can be modified through doping, allowing for tailored electronic properties. However, handling In2Se3 requires caution due to the toxicity of selenium. Overall, indium selenide is a significant material in the field of semiconductor technology, particularly in the development of advanced electronic and optoelectronic devices.

Indium selenide (In2Se3)

12056-07-4: Diindium Triselenide, Indium Selenide (2:3), Indium selenide (In<sub>2</sub>Se<sub>3</sub>), Indium sesquiselenide, Selanylidene-selanylideneindiganylselanylindigane, Indium selenide, Indium selenide (In2Se3)

Indium selenide, 99.999%

Indium(III) selenide is used in photovoltaic devices. It is also used for optoelectronics and in solar cells. This Thermo Scientific Chemicals brand product was originally part of the Alfa Aesar product portfolio. Some documentation and label information may refer to the legacy brand. The original Alfa Aesar product / item code or SKU reference has not changed as a part of the brand transition to Thermo Scientific Chemicals.

Indium(III) selenide, 99.99% (metals basis)

Indium selenide is a semiconductor material that can be used in optical and electronic applications. It emits light when irradiated with a laser and has been used to produce nanoribbons. Indium selenide has been studied for its use as an electron field emission cathode, as well as for detecting signals from a variety of sources, including ionizing radiation, chlorides, and hydrogen ions. Indium selenide has also been found to grow faster than gallium arsenide on silicon substrates.

CAS 12056-07-4: Indium selenide (In2Se3)

Indium selenide, 99.999%

Ref: 7W-GX3604

Indium(III) selenide, 99.99% (metals basis)

Ref: 02-088280

Indium(III) selenide

Ref: 3D-FI170458

Indium(III) selenide, lump

Ref: 54-IN2019