Metal Reagents for Organic Synthesis

ALD Material Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber. Copper (II) 2,4-pentanedionate; Cupric acetylacetonate Color: pale blueMetal content: 2.8-24.5% CuVapor pressure, 100 °C: 0.001 mmVapor pressure, 163 °C': 0.1 mmSolubility, dimethylsulfoxide: 4.4 g/LSolubility, toluene: 0.4 g/LSolubility, water: 0.2 g/LStability constant, pKa dioxane/water: 9.7Catalyst for the reduction of nitro-aromatics NaBH4Catalyst for hydrogenation of unsaturated fatsCatalyst for flexible urethanesExcimer laser induces deposition of copperMetal-Organic Chemical Vapor Deposition (MOCVD) generates copper oxide filmsForms ferromagnetic chains on photolysis with diazodi-4-pyridylmethane

ALD Material Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber. Tantalum(V) ethoxide; Pentaethoxytantalum; Tantalum(5+) ethanolate Soluble: toluene, ethanolVapor pressure, 20 °C: 8 mmVapor pressure, 50 °C: 26 mmMolecular complexity: 1.98Employed in sol-gel synthesis of bulk and thin film Ta2O5 as a capacitor dielectricEmployed in sol-gel synthesis of lithium tantalate ferroelectricsForms chiral complexes with substituted trialkanolamines useful in asymmetric catalysisEmployed in low-pressure CVD of optical interference filtersTavalite® jewelry in which alternating TaO5-SiO2 are deposited onto cubic zirconia

ALD Material Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber. Copper (II) hexafluoro-2,4-pentanedionate, dihydrate; Cupric hexafluoroacetylacetonate Vapor pressure, 50 °C: 1 mmVapor pressure, 95 °C: 10 mmSolubility, methanol: >200 g/LSoluble: methanol, acetone, tolueneEmployed in CVD of superconductorsCatalyst for addition of diazopentanediones to aldehydes and ketones to form dioxolesCu thin films deposited with H2 at 250 °CForms ferromagnetic chains on photolysis with diazodi-4-pyridylmethane