Tin (Sn) Compounds

ALD Material Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber. Tetramethyltin; Tetramethylstannane ΔHcomb: 903.5 kcal/molΔHform, gas, 27 °: -13.6 kcal/mol ΔHvap: 6.8 kcal/molSn-Me bond dissociation energy: 227 kJ/molEa, pyrolysis: 41.1 kcal/molVapor pressure, -21 °C: 10 mmVapor pressure, 20 °C: 90 mmAllows synthesis of even numbered alkanesConverts acid chlorides to methyl ketones with benzylchlorobis(triphenyl phosphine)palladiumForms aryl methyl ketones from aryl halides and CO in the presence of dicarbonylbis(triphenylphosphine)nickelFor CVD of tin oxide transparent conductive electrodes on glass for photovoltaics and sensorsPyrolyzed in vacuum to tin at 600-750 °CPyrolyzed oxidatively to SnO at 350-600 °CForms transparent conductive oxides for photovoltaics by Plasma-enhanced chemical vapor deposition (PECVD)Higher purity grade available, SNT7560.1

ALD Material Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber. Tetrakis(dimethylamino)tin; Octamethylstannanetetraamine; Tin IV dimethylamide Reacts with tris(aminoalkyl)amines, yielding azastannatranes

Organotin Cross-Coupling Agent The cross-coupling reaction is a highly useful methodology for the formation of carbon-carbon bonds. It involves two reagents, with one typically being a suitable organometallic reagent - the nucleophile - and the other a suitable organic substrate, normally an unsaturated halide, tosylate or similar - the electrophile. 1-Ethoxyvinyltri-n-butyltin; Tri-n-butyl(1-ethoxyvinyl)stannane Transfer of acyl group equivalent in Stille CouplingCan be cross-coupled with aryl chloridesUsed to acylate aryl triflatesUndergoes Stille cross-coupling reactions as employed in the syntheses of three cladiellinsCross-couples with vinyl sulfidesCan be cross-coupled with heteroaromatic chloridesExtensive review of silicon based cross-coupling agents: Denmark, S. E. et al. "Organic Reactions, Volume 75" Denmark, S. E. ed., John Wiley and Sons, 233, 2011