CAS 2081-12-1: tert-butossido di zirconio(IV)

It finds it application as a reagent for the preparation of heterometallic tin(II) or lead(II) zirconium alkoxides. It is used as a catalyst in cyanation process. Zirconium tert-butoxide (ZTB) precursor is used to deposit thin films of Zirconia and other zirconium containing films by atomic layer deposition and chemical vapor deposition methods. Zirconium oxide thin films can also be grown at low temperatures, ranging from 150°C to 300°C, by the presence of moisture along with ZTB or by UV-enhanced atomic layer deposition (UV-ALD) process. This Thermo Scientific Chemicals brand product was originally part of the Alfa Aesar product portfolio. Some documentation and label information may refer to the legacy brand. The original Alfa Aesar product / item code or SKU reference has not changed as a part of the brand transition to Thermo Scientific Chemicals.

CVD Material The growth of thin films via chemical vapor deposition (CVD) is an industrially significant process with a wide array of applications, notably in microelectronic device fabrication. A volatilized precursor (such as a silane, organometallic or metal coordination complex) is passed over a heated substrate. Thermal decomposition of the precursor produces a thin-film deposit, and ideally, the ligands associated with the precursor are cleanly lost to the gas phase as reaction products. Compared to other thin-film production techniques, CVD offers several significant advantages, most notably the potential for effecting selective deposition and lower processing temperatures. Many metal CVD depositions are autocatalytic. Growth of such thin films is characterized by an induction period, which is a consequence of the higher barriers that relate to the activation of the precursor on a non-native substrate. CVD is the preferred deposition method for fabricating optical storage, as it is a well-established method with good scalability, reproducibility, and uniformity. It is also capable of high rates and good composition control. Zirconium t-butoxide; Tetra-t-butylzirconate Vapor pressure, 26 °C: 0.06 mmVapor pressure, 52 °C: 0.46 mmVapor pressure, 75 °C: 2.20 mmVapor pressure, 102 °C: 9.46 mmColor: straw to light amberEmployed in CVD ZrOCouples carboxylic acids to aluminum (native oxide) surfacesReagent for preparation of tin(II) and lead(II) heterometallic alkoxidesKey component of catalyst for the enantioselective reaction of enol silyl ethers with aldimines

Zirconium(IV) t-butoxide (99.99%-Zr) PURATREM

Zirconium t-butoxide is a reactive solid which has been shown to possess high catalytic activity for the conversion of magnesium oxide to magnesium chloride in the presence of chlorine. The reaction system is homogeneous and the catalyst can be recovered by filtration. Zirconium t-butoxide has also been shown to promote the growth of silicon nanowires with a high degree of uniformity. This material can be used as a coating on various surfaces due to its resistance to corrosion and its low reactivity towards water, oxygen, and other materials.

Zirconium(IV) t-butoxide, 99%